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For the Inventor, By the Inventor

Wappingers Falls, NY, United States of America

Meikei Ieong

USPTO Granted Patents = 85


Average Co-Inventor Count = 4.1

ph-index = 25

Forward Citations = 3,459(Granted Patents)

Forward Citations (Not Self Cited) = 3,415(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Baoshan Township, TW (2009)
  • Baoshan Township, Hsinchu County, TW (2009 - 2014)
  • Wappingers Falls, NY (US) (2001 - 2016)

Company Filing History:

goldMedal84 out of 164,173 
 
International Business Machines Corporation
 patents
silverMedal1 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2001-2016

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Areas of Expertise:
CMOS Technology
Hybrid Orientation SOI
Strained Silicon
FINFET Structures
Ultra Short MOSFET
Three Dimensional Integrated Circuits
Self-Aligned Transistors
High-Performance SRAM Cells
Substrate Engineering
Biaxial Compressive Strain
Hybrid Substrate Technology
Sectional Field Effect Devices
85 patents (USPTO):Explore Patents
1. 9355887 - Dual trench isolation for CMOS with hybrid orientations (2016-05-31),
2. 8785281 - CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materials (2014-07-22),
3. 8158481 - CMOS structure and method for fabrication thereof using multiple crystallographic orientations and gate materials (2012-04-17),
4. 8097516 - Dual trench isolation for CMOS with hybrid orientations (2012-01-17),
5. 8080838 - Contact scheme for FINFET structures with multiple FINs (2011-12-20),
6. 7960790 - Self-aligned planar double-gate transistor structure (2011-06-14),
7. 7943486 - Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain (2011-05-17),
8. 7834425 - Hybrid orientation SOI substrates, and method for forming the same (2010-11-16),
9. 7833854 - Structure and method of fabricating a hybrid substrate for high-performance hybrid-orientation silicon-on-insulator CMOS devices (2010-11-16),
10. 7790538 - Integration of strained Ge into advanced CMOS technology (2010-09-07),
11. 7759772 - Method to form Si-containing SOI and underlying substrate with different orientations (2010-07-20),
12. 7723207 - Three dimensional integrated circuit and method of design (2010-05-25),
13. 7713807 - High-performance CMOS SOI devices on hybrid crystal-oriented substrates (2010-05-11),
14. 7691688 - Strained silicon CMOS on hybrid crystal orientations (2010-04-06),
15. 7691482 - Structure for planar SOI substrate with multiple orientations (2010-04-06),

Title: The Innovative Journey of Meikei Ieong

Introduction:

Meikei Ieong, a pioneering inventor hailing from Wappingers Falls, NY, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents:

Meikei Ieong's latest patents showcase his commitment to pushing the boundaries of innovation in the tech industry, with a focus on cutting-edge solutions for complex challenges.

Career Highlights:

Throughout his illustrious career, Meikei Ieong has demonstrated a remarkable ability to transform ideas into tangible inventions that have revolutionized the way we interact with technology. His passion for innovation has led to the development of numerous patents that have had a lasting impact on the industry.

Collaborations:

Meikei Ieong's collaborative spirit has been instrumental in his success, as he has worked with leading experts and organizations to bring his inventions to life. His ability to work effectively in teams has enabled him to tackle some of the most pressing technological issues of our time.

Conclusion:

In conclusion, Meikei Ieong's innovative spirit and dedication to technological advancement have solidified his reputation as a trailblazing inventor. His contributions to the field continue to inspire future generations of inventors to push the boundaries of what is possible in the world of technology.

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