The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
May. 06, 2008
Victor Chan, New Paltz, NY (US);
Massimo V. Fischetti, Putnam Valley, NY (US);
John M. Hergenrother, Ridgefield, CT (US);
Meikei Ieong, Wappingers Falls, NY (US);
Rajesh Rengarajan, Fishkill, NY (US);
Alexander Reznicek, Mount Kisco, NY (US);
Paul M. Solomon, Yorktown Heights, NY (US);
Chun-yung Sung, Poughkeepsie, NY (US);
Min Yang, Yorktown Heights, NY (US);
Victor Chan, New Paltz, NY (US);
Massimo V. Fischetti, Putnam Valley, NY (US);
John M. Hergenrother, Ridgefield, CT (US);
Meikei Ieong, Wappingers Falls, NY (US);
Rajesh Rengarajan, Fishkill, NY (US);
Alexander Reznicek, Mount Kisco, NY (US);
Paul M. Solomon, Yorktown Heights, NY (US);
Chun-yung Sung, Poughkeepsie, NY (US);
Min Yang, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial compressive strain. The term 'biaxial compressive stress' is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing <110> layer; and creating a biaxial strain in the silicon-containing <110> layer.