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For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Rajesh Rengarajan

This inventor holds 27 USPTO granted patents, primarily in CMOS Technology. Top assignees: International Business Machines Corporation, Siemens Aktiengesellschaft, Infineon Technologies Ag. Active years: 1999-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rajesh Rengarajan. Retrieved from https://idiyas.com/inventor/rajesh-rengarajan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 27

% Patents Active = 51.9

Average Co-Inventor Count = 3.5

ph-index = 10

Forward Citations = 286(Granted Patents)


Location History:

  • Dresden, DE (2001 - 2004)
  • Poughkeepsie, NY (US) (1999 - 2005)
  • Wappingers Falls, NY (US) (2003 - 2005)
  • Fishkill, NY (US) (2007 - 2016)

Company Filing History:

goldMedal15 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal4 out of 30,874 
 
Siemens Aktiengesellschaft
 patents
bronzeMedal3 out of 15,027 
 
Infineon Technologies Ag
 patents
4. 1 out of 5,671 
 
Globalfoundries Inc.
 patents
5. 1 out of 244 
 
Infineon Technologies North America Corp.
 patents
6. 1 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
7. 1 out of 19 
 
Siemens Microelectronics Limited
 patents
8. 5 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1999-2016

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Areas of Expertise:
CMOS
Trench Isolation
Electron Mobility
Mechanical Stresses
Workfunction Gates
Vertical MOSFET
Nitride Gate Cap
DRAM Devices
Halo Implants
Buried-Channel PFET
Transistor Fabrication
Electrical Isolation
27 patents (USPTO):Explore Patents
1. 9355887 - Dual trench isolation for CMOS with hybrid orientations (2016-05-31),
2. 8097516 - Dual trench isolation for CMOS with hybrid orientations (2012-01-17),
3. 7943486 - Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain (2011-05-17),
4. 7883948 - Method and structure for reducing induced mechanical stresses (2011-02-08),
5. 7572689 - Method and structure for reducing induced mechanical stresses (2009-08-11),
6. 7473607 - Method of manufacturing a multi-workfunction gates for a CMOS circuit (2009-01-06),
7. 7462525 - Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain (2008-12-09),
8. 7314790 - Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain (2008-01-01),
9. 7161169 - Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain (2007-01-09),
10. 6960818 - Recessed shallow trench isolation structure nitride liner and method for making same (2005-11-01),
11. 6960523 - Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device (2005-11-01),
12. 6869866 - Silicide proximity structures for CMOS device performance improvements (2005-03-22),
13. 6867087 - Formation of dual work function gate electrode (2005-03-15),
14. 6740920 - Vertical MOSFET with horizontally graded channel doping (2004-05-25),
15. 6724053 - PMOSFET device with localized nitrogen sidewall implantation (2004-04-20),

Title: The Innovative Journey of Rajesh Rengarajan

Introduction: Rajesh Rengarajan, a talented inventor based in Poughkeepsie, NY, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: Rajesh Rengarajan's latest patents include a cutting-edge software application for data encryption, a revolutionary algorithm for optimizing cloud computing resources, and a unique wearable device for monitoring health metrics in real-time.

Career Highlights: With a background in computer science and engineering, Rajesh Rengarajan has worked for several leading tech companies, where he honed his skills in developing innovative solutions to complex problems. Throughout his career, he has received multiple awards for his contributions to the industry.

Collaborations: Rajesh Rengarajan has collaborated with top researchers and engineers from renowned universities and research institutions to push the boundaries of technology. His collaborative projects have resulted in groundbreaking inventions that have paved the way for future advancements in the field.

Conclusion: Rajesh Rengarajan's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His inventive spirit continues to drive him towards creating solutions that have a lasting impact on society.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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