The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Jul. 09, 2008
Victor Chan, New Paltz, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Rajesh Rengarajan, Fishkill, NY (US);
Alexander Reznicek, Mount Kisko, NY (US);
Chun-yung Sung, Poughkeepsie, NY (US);
Min Yang, Yorktown Heights, NY (US);
Victor Chan, New Paltz, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Rajesh Rengarajan, Fishkill, NY (US);
Alexander Reznicek, Mount Kisko, NY (US);
Chun-yung Sung, Poughkeepsie, NY (US);
Min Yang, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a semiconductor structure in which different types of devices are located upon a specific crystal orientation of a hybrid substrate that enhances the performance of each type of device. In the semiconductor structure of the present invention, a dual trench isolation scheme is employed whereby a first trench isolation region of a first depth isolates devices of different polarity from each other, while second trench isolation regions of a second depth, which is shallower than the first depth, are used to isolate devices of the same polarity from each other. The present invention further provides a dual trench semiconductor structure in which pFETs are located on a (110) crystallographic plane, while nFETs are located on a (100) crystallographic plane. In accordance with the present invention, the devices of different polarity, i.e., nFETs and pFETs, are bulk-like devices.