The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Mar. 11, 2002
Dureseti Chidambarrao, Weston, CT (US);
Kil-Ho Lee, Wappingers Falls, NY (US);
Jack A. Mandelman, Stormville, NY (US);
Kevin McStay, Hopewell Junction, NY (US);
Rajesh Rengarajan, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Body effects in vertical MOSFET transistors are considerably reduced and other device parameters are unaffected in a vertical transistor having a threshold implant with a peak at the gate and an implant concentration distribution that declines rapidly away from the gate to a plateau having a low p-well concentration value. A preferred embodiment employs two body implants—an angled implant having a peak at the gate that sets the Vt and a laterally uniform low dose implant that sets the well dopant concentration.