The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Apr. 03, 2003
Michael Maldei, Durham, NC (US);
Prakash C. Dev, Plano, TX (US);
David Dobuzinsky, New Windsor, NY (US);
Johnathan Faltermeier, LaGrange, NY (US);
Thomas S. Rupp, Faak am See, AT;
Chienfan Yu, Highland Mills, NY (US);
Rajesh Rengarajan, Poughkeepsie, NY (US);
John Benedict, New Paltz, NY (US);
Munir-ud-din Naeem, Poughkeepsie, NY (US);
Michael Maldei, Durham, NC (US);
Prakash C. Dev, Plano, TX (US);
David Dobuzinsky, New Windsor, NY (US);
Johnathan Faltermeier, LaGrange, NY (US);
Thomas S. Rupp, Faak am See, AT;
Chienfan Yu, Highland Mills, NY (US);
Rajesh Rengarajan, Poughkeepsie, NY (US);
John Benedict, New Paltz, NY (US);
Munir-ud-Din Naeem, Poughkeepsie, NY (US);
Infineon Technolgies AG, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
An etch rate of a nitride liner layer is improved relative to an etch rate of a nitride cap layer. The nitride liner layer is located at an exposed portion of a substrate adjacent to a stacked structure also located atop the substrate. The nitride cap layer is located atop the stacked structure. An oxide spacer is formed along sidewalls of the stacked structure. The nitride liner layer is patterned and etched to form at least one opening therein to the substrate while the nitride cap layer remains substantially intact.