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For the Inventor, By the Inventor

Delanson, NY, United States of America

Johnathan E Faltermeier

USPTO Granted Patents = 65 

Average Co-Inventor Count = 4.8

ph-index = 15

Forward Citations = 802(Granted Patents)


Inventors with similar research interests:


Location History:

  • Lagrange, NY (US) (2000 - 2005)
  • Fishkill, NY (US) (2000 - 2007)
  • LaGrangeville, NY (US) (2001 - 2010)
  • Albany, NY (US) (2011 - 2016)
  • San Jose, CA (US) (2016 - 2018)
  • Delanson, NY (US) (2009 - 2019)

Company Filing History:

goldMedal58 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal7 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal3 out of 14,705 
 
Infineon Technologies Ag
 patents
4. 1 out of 30,028 
 
Siemens Aktiengesellschaft
 patents
5. 1 out of 244 
 
Infineon Technologies North America Corp.
 patents
6. 4 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 2000-2019

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65 patents (USPTO):
1. 10332971 - Replacement metal gate stack for diffusion prevention (2019-06-25),
2. 10008415 - Gate structure cut after formation of epitaxial active regions (2018-06-26),
3. 9905665 - Replacement metal gate stack for diffusion prevention (2018-02-27),
4. 9865703 - High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) process (2018-01-09),
5. 9735277 - Partially dielectric isolated fin-shaped field effect transistor (FinFET) (2017-08-15),
6. 9633906 - Gate structure cut after formation of epitaxial active regions (2017-04-25),
7. 9559009 - Gate structure cut after formation of epitaxial active regions (2017-01-31),
8. 9537011 - Partially dielectric isolated fin-shaped field effect transistor (FinFET) (2017-01-03),
9. 9472408 - Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress (2016-10-18),
10. 9412596 - Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress (2016-08-09),
11. 9337315 - FinFET spacer formation by oriented implantation (2016-05-10),
12. 9331174 - Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe) (2016-05-03),
13. 9318578 - FinFET spacer formation by oriented implantation (2016-04-19),
14. 9312136 - Replacement metal gate stack for diffusion prevention (2016-04-12),
15. 9263454 - Semiconductor structure having buried conductive elements (2016-02-16),

Title: Innovator Spotlight: Johnathan E Faltermeier - Pioneering Semiconductor Technologies

Introduction:

Johnathan E Faltermeier, a prolific inventor based in Delanson, NY, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 65 patents, Faltermeier is recognized for his groundbreaking work in developing advanced semiconductor structures.

Latest Patents:

Two of Faltermeier's recent patents showcase his innovative approach to semiconductor manufacturing:

1. Replacement Metal Gate Stack for Diffusion Prevention: This patent describes a method for forming a semiconductor structure that effectively prevents diffusion by utilizing a protective layer and a conductive barrier, enhancing the performance and reliability of semiconductor devices.

2. Gate Structure Cut After Formation of Epitaxial Active Regions: This patent details a technique for forming gate structures in semiconductor materials, optimizing the fabrication process and improving the electrical performance of semiconductor components.

Career Highlights:

Faltermeier has an extensive professional background, with experience working in renowned companies such as IBM (International Business Machines Corporation) and Globalfoundries Inc. His expertise and innovative spirit have been instrumental in driving advancements in semiconductor technology, shaping the industry's landscape.

Collaborations:

Throughout his career, Faltermeier has collaborated with esteemed colleagues such as Kangguo Cheng and Veeraraghavan S Basker. These collaborations have led to the development of cutting-edge technologies and have fostered a culture of innovation within the semiconductor community.

Conclusion:

In conclusion, Johnathan E Faltermeier stands out as a visionary inventor in the realm of semiconductor technology. His patented innovations and contributions to the field have not only propelled technological advancements but have also inspired the next generation of inventors and innovators in the industry. Faltermeier's dedication to pushing the boundaries of semiconductor research continues to make a significant impact, shaping the future of technology.

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