The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Jan. 30, 2015
International Business Machines Corporation, Armonk, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Johnathan E. Faltermeier, San Jose, CA (US);
Hemanth Jagannathan, Guilderland, NY (US);
Tenko Yamashita, Schenectady, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A method of reducing a migration of oxygen into a high-k dielectric layer of a semiconducting device is disclosed. An oxide layer of the semiconducting device is deposited on a substrate. A chemical composition of a top portion of the oxide layer is altered. The high-k dielectric layer is deposited on the top portion of the oxide layer to form the semiconducting device. The altered chemical composition of the top portion of the oxide layer reduces migration of oxygen into the high-k dielectric layer.