The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Apr. 15, 2010
Applicants:
Bruce B. Doris, Yorktown Heights, NY (US);
Johnathan E. Faltermeier, Albany, NY (US);
Lahir M. Shaik Adam, Yorktown Heights, NY (US);
Balasubramanian S. Pranatharthi Haran, Albany, NY (US);
Inventors:
Bruce B. Doris, Yorktown Heights, NY (US);
Johnathan E. Faltermeier, Albany, NY (US);
Lahir M. Shaik Adam, Yorktown Heights, NY (US);
Balasubramanian S. Pranatharthi Haran, Albany, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/223 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 29/165 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66636 (2013.01); H01L 29/6659 (2013.01); H01L 29/7848 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/223 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 21/2807 (2013.01); H01L 29/165 (2013.01); H01L 29/495 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/6656 (2013.01);
Abstract
A semiconductor substrate including a field effect transistor (FET) and a method of producing the same wherein a stressor is provided in a recess before the source/drain region is formed. The device has an increased carrier mobility in the channel region adjacent to the gate electrode.