Yorktown Heights, NY, United States of America

Lahir M Shaik Adam


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Lahir M Shaik Adam: Innovator in Semiconductor Technology

Introduction

Lahir M Shaik Adam is a notable inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in improving device performance.

Latest Patents

Lahir holds a patent for a "Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)." This innovative patent describes a semiconductor substrate that includes a field effect transistor (FET) and a method of producing the same. The method involves providing a stressor in a recess before the source/drain region is formed. This design results in increased carrier mobility in the channel region adjacent to the gate electrode. Lahir has 1 patent to his name.

Career Highlights

Lahir is currently employed at GlobalFoundries Inc., a leading company in semiconductor manufacturing. His work focuses on enhancing the performance of semiconductor devices, which is crucial for the advancement of technology in various applications.

Collaborations

Lahir has collaborated with several talented individuals in his field, including Bruce Bennett Doris and Johnathan E Faltermeier. These collaborations have contributed to the innovative projects he has been involved in.

Conclusion

Lahir M Shaik Adam is a prominent figure in the semiconductor industry, recognized for his innovative patent and contributions to device performance enhancement. His work at GlobalFoundries Inc. continues to influence the future of technology.

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