Enter inventor name

Average Co-Inventor Count = 4.8

ph-index = 17

Forward Citations = 1,614(Granted Patents)

Forward Citations (Not Self Cited) = 1,609(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Essex Junction, VT (US) (1992 - 1995)
Hopewell Junction, NY (US) (1995 - 2011)
East Meadow, NY (US) (2013)
New Windsor, NY (US) (2003 - 2014)

Company Filing History:

48 out of 164,197

International Business Machines Corporation

patents

6 out of 30,045

Siemens Aktiengesellschaft

patents

3 out of 52,735

Kabushiki Kaisha Toshiba

patents

4. 2 out of 14,724

Infineon Technologies Ag

patents

5. 5 out of 832,843

Other

patents

where one patent can have more than one assignee

Years Active: 1992-2014

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Areas of Expertise:

Embedded DRAM

Vertical SOI Trench SONOS Cell

Shallow Trench Isolation

Trench Capacitor

Self-Aligned Borderless Contacts

High Dielectric TiO2-SiN Films

Carbon-Graded Layer

Reactive Ion Etch

Integrated Circuits

Epitaxial Regrowth

Thin Crystalline Si3N4 Liners

Fluorinated Silicon Nitride Films

55 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8772850 - Embedded DRAM memory cell with additional patterning layer for improved strap formation (2014-07-08),

2. 8426268 - Embedded DRAM memory cell with additional patterning layer for improved strap formation (2013-04-23),

3. 8008713 - Vertical SOI trench SONOS cell (2011-08-30),

4. 8003488 - Shallow trench isolation structure compatible with SOI embedded DRAM (2011-08-23),

5. 7893485 - Vertical SOI trench SONOS cell (2011-02-22),

6. 7871893 - Method for non-selective shallow trench isolation reactive ion etch for patterning hybrid-oriented devices compatible with high-performance highly-integrated logic devices (2011-01-18),

7. 7592245 - Poly filled substrate contact on SOI structure (2009-09-22),

8. 7560360 - Methods for enhancing trench capacitance and trench capacitor (2009-07-14),

9. 7514323 - Vertical SOI trench SONOS cell (2009-04-07),

10. 7394131 - STI formation in semiconductor device including SOI and bulk silicon regions (2008-07-01),

11. 7358172 - Poly filled substrate contact on SOI structure (2008-04-15),

12. 7118986 - STI formation in semiconductor device including SOI and bulk silicon regions (2006-10-10),

13. 7087532 - Formation of controlled sublithographic structures (2006-08-08),

14. 6964897 - SOI trench capacitor cell incorporating a low-leakage floating body array transistor (2005-11-15),

15. 6960523 - Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device (2005-11-01),

Title: The Innovative Mind of David M Dobuzinsky

Introduction:

David M Dobuzinsky, a talented inventor hailing from Hopewell Junction, NY, has made significant contributions to the world of technology through his groundbreaking inventions and patents.

Latest Patents:

David M Dobuzinsky's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and medical devices, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights:

With a career spanning over two decades, David M Dobuzinsky has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing solutions that push the boundaries of what is possible. His innovative spirit has led to the creation of several game-changing products that have revolutionized their respective industries.

Collaborations:

Throughout his career, David M Dobuzinsky has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects, highlighting his strong communication and leadership skills.

Conclusion:

In conclusion, David M Dobuzinsky's passion for innovation, coupled with his dedication to pushing the limits of technology, has solidified his reputation as a trailblazing inventor in the world of patents and inventions. His contributions continue to inspire the next generation of inventors to think outside the box and strive for excellence in all their endeavors.

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