The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Dec. 13, 2007
David M. Dobuzinsky, New Windsor, NY (US);
Herbert L. Ho, Cornwall, NY (US);
Jack A. Mandelman, Flat Rock, NC (US);
Yoichi Otani, Wappingers Falls, NY (US);
David M. Dobuzinsky, New Windsor, NY (US);
Herbert L. Ho, Cornwall, NY (US);
Jack A. Mandelman, Flat Rock, NC (US);
Yoichi Otani, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor memory device and a design structure including the semiconductor memory device embodied in a machine readable medium is provided. In particular the present invention includes a semiconductor memory device in which a vertical trench semiconductor-oxide-nitride-oxide-semiconductor (SONOS) memory cell is created in a semiconductor-on-insulator (SOI) substrate is provided that allows for the integration of dense non-volatile random access memory (NVRAM) cells in SOI-based complementary metal oxide semiconductor (CMOS) technology. The trench is processed using conventional trench processing and it is processed near the beginning of the inventive method that allows for the fabrication of the memory cell to be fully separated from SOI logic processing.