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For the Inventor, By the Inventor

Wappingers Falls, NY, United States of America

Yoichi Otani

USPTO Granted Patents = 11

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 144(Granted Patents)


Location History:

  • Wappingers Falls, NY (US) (2006 - 2012)
  • Bargen BE, CH (2009 - 2013)

Company Filing History:

goldMedal11 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2006-2013

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11 patents (USPTO):
1. 8513779 - CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectors (2013-08-20),
2. 8237247 - CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectors (2012-08-07),
3. 8120095 - High-density, trench-based non-volatile random access SONOS memory SOC applications (2012-02-21),
4. 8008713 - Vertical SOI trench SONOS cell (2011-08-30),
5. 7893485 - Vertical SOI trench SONOS cell (2011-02-22),
6. 7816728 - Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications (2010-10-19),
7. 7807526 - Method of fabricating high-density, trench-based non-volatile random access SONOS memory cells for SOC applications (2010-10-05),
8. 7595232 - CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectors (2009-09-29),
9. 7575970 - Deep trench capacitor through SOI substrate and methods of forming (2009-08-18),
10. 7514323 - Vertical SOI trench SONOS cell (2009-04-07),
11. 7078756 - Collarless trench DRAM device (2006-07-18),

Title: The Innovations of Yoichi Otani

Introduction

Yoichi Otani is a prominent inventor based in Wappingers Falls, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on enhancing the performance and efficiency of complementary metal-oxide-semiconductor (CMOS) devices.

Latest Patents

One of Otani's latest patents involves CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectors. This invention relates to complementary devices, such as n-FETs and p-FETs, which feature hybrid channel orientations. These devices are connected by conductive connectors embedded in a semiconductor substrate. The substrate consists of at least two device regions with different surface crystal orientations. An n-FET is formed in one of these regions, while a p-FET is formed in the other. The n-FET and p-FET are electrically connected by a conductive connector located between the two regions and embedded within the substrate. A dielectric spacer is first provided between the regions and recessed to create a gap, where the conductive connector is formed above the recessed dielectric spacer.

Career Highlights

Otani has had a distinguished career at the International Business Machines Corporation (IBM). His innovative work in semiconductor technology has positioned him as a key figure in the industry. His patents reflect a deep understanding of the complexities involved in semiconductor design and fabrication.

Collaborations

Throughout his career, Otani has collaborated with notable colleagues, including Herbert Lei Ho and Jack Allan Mandelman. These collaborations have contributed to the advancement of technology in the semiconductor field.

Conclusion

Yoichi Otani's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the development of advanced electronic devices.

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