The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Dec. 13, 2007
Herbert L. Ho, New Windsor, NY (US);
Jack A. Mandelman, Flat Rock, NC (US);
Tak H. Ning, Yorktown Heights, NY (US);
Yoichi Otani, Wappingers Falls, NY (US);
Herbert L. Ho, New Windsor, NY (US);
Jack A. Mandelman, Flat Rock, NC (US);
Tak H. Ning, Yorktown Heights, NY (US);
Yoichi Otani, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides two-transistor silicon-oxide-nitride-oxide-semiconductor (2-Tr SONOS) non-volatile memory cells with randomly accessible storage locations as well as a design structure including the semiconductor memory devices embodied in a machine readable medium. In one embodiment, a 2-Tr SONOS cell is provided in which the select transistor is located with a trench structure having trench depth from 1 to 2 μm and the memory transistor is located on a surface of a semiconductor substrate adjoining the trench structure. In another embodiment, a 2-Tr SONOS memory cell is provided in which both the select transistor and the memory transistor are located within a trench structure having the depth mentioned above.