Tak H Ning

Title: Tak H Ning: Pioneering Innovations in Transistors and Memory Devices

Introduction:

Tak H Ning, a prolific inventor with a base in Yorktown Heights, NY, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 267 patents, Ning has demonstrated a remarkable ability to innovate in areas such as vertical bipolar junction transistors and stacked vertical transport field effect transistors. In this article, we will explore Ning's latest patents, delve into his career highlights, and examine his notable collaborations.

Latest Patents:

Among Tak H Ning's recent patents, two noteworthy inventions stand out:

1. Vertical bipolar junction transistor with all-around extrinsic base and epitaxially graded intrinsic base:

This patent describes a novel design for a vertical bipolar junction transistor, which features an intrinsic base epitaxially grown on a first emitter or collector, with a compositionally graded structure. The transistor also includes a second emitter or collector formed on the intrinsic base, and an extrinsic base surrounding the intrinsic base. The extrinsic base is isolated from the first emitter or collector by a spacer, and from the second emitter or collector by another spacer. This design utilizes III-V semiconductor materials and enables enhanced performance with a larger bandgap in the extrinsic base.

2. Stacked vertical transport field effect transistor electrically erasable programmable read-only memory (EEPROM) devices:

This patent presents a vertically stacked configuration of n-type and p-type vertical transport field effect transistors (VT FETs). The stacked setup comprises a lower channel pillar, a first top source/drain, a second bottom source/drain, an upper channel pillar, and a second top source/drain. The unique architecture of this memory device allows for efficient electrical erasing and programming, making it an excellent solution for EEPROM applications.

Career Highlights:

Tak H Ning has made significant contributions during his tenure in several prominent companies, including:

1. IBM (International Business Machines Corporation):

Ning has spent a considerable portion of his career at IBM, making noteworthy advancements in semiconductor technologies. His work at IBM has been characterized by pioneering research and breakthrough innovations in transistors, memory devices, and material science.

2. GlobalFoundries:

Ning has also contributed his expertise to GlobalFoundries, a leading semiconductor foundry company. His contributions to GlobalFoundries' research and development efforts have further solidified his reputation as an innovator in the semiconductor industry.

Collaborations:

Throughout his career, Tak H Ning has collaborated with esteemed professionals who have shared his passion for innovation and technological advancement. Notable collaborators include Alexander Reznicek and Jeng-Bang Yau. These collaborations have resulted in groundbreaking research and the development of patented technologies that have greatly influenced the field.

Conclusion:

Tak H Ning's exceptional career is marked by numerous patented inventions, particularly in the realm of transistors and memory devices. Through his work with esteemed companies like IBM and GlobalFoundries, Ning has left an indelible mark on the semiconductor industry. His drive to explore new avenues and collaborate with like-minded individuals has propelled the field forward, enabling transformative advancements in technology. As we look ahead, we eagerly anticipate further contributions from this visionary inventor.