The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Feb. 26, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kuen-Ting Shiu, Yorktown Heights, NY (US);

Tak H. Ning, Yorktown Heights, NY (US);

Jeng-Bang Yau, Yorktown Heights, NY (US);

Cheng-Wei Cheng, White Plains, NY (US);

Ko-Tao Lee, Yorktown Heights, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 21/308 (2006.01); H01L 29/06 (2006.01); H01L 21/306 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66318 (2013.01); H01L 21/308 (2013.01); H01L 21/30621 (2013.01); H01L 29/0649 (2013.01); H01L 29/205 (2013.01); H01L 29/737 (2013.01);
Abstract

A lateral bipolar junction transistor including an emitter region, base region and collector region laterally orientated over a type IV semiconductor substrate, each of the emitter region, the base region and the collector region being composed of a type III-V semiconductor material. A buried oxide layer is present between the type IV semiconductor substrate and the emitter region, the base region and the collector region. The buried oxide layer having a pedestal aligned with the base region.


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