Yorktown Heights, NY, United States of America

Jeng-Bang Yau

USPTO Granted Patents = 132 

Average Co-Inventor Count = 3.6

ph-index = 11

Forward Citations = 444(Granted Patents)

Forward Citations (Not Self Cited) = 365(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Ossining, NY (US) (2010 - 2014)
  • Yorktown Heights, NY (US) (2011 - 2024)

Company Filing History:


Years Active: 2010-2024

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Areas of Expertise:
Low Resistance Contacts
Intermetallic Alloy
Qubit Device
Bipolar Junction Transistor
Field Effect Transistor
Electrically Erasable Programmable Read Only Memory
Nanosheet Structures
Radiation Dosimeter
Chemical Frequency Modification
Superconducting Circuits
Dual Base Region
Monolithic Co-Integration
132 patents (USPTO):Explore Patents

Title: Jeng-Bang Yau: Innovator Fostering Breakthroughs in Semiconductor Technology

Introduction:

Jeng-Bang Yau, a prominent inventor based in Yorktown Heights, NY, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 126 patents, Yau's work has revolutionized various aspects of the industry. This article dives into his latest patented inventions, highlights his career achievements, explores his collaborations with notable colleagues, and celebrates his invaluable contributions to the field.

Latest Patents:

Among Jeng-Bang Yau's recent patents, one stands out as particularly groundbreaking - "Spurious junction prevention via in-situ ion milling." This patent introduces systems and techniques that facilitate preventing spurious junctions during the fabrication of Josephson junctions. Through a shadow evaporation process, the method forms a tunnel barrier of a Josephson junction on a substrate while also etching an exposed portion of the tunnel barrier. By leveraging the resist stack's shadow and applying precise directions of etching, the protected portion of the tunnel barrier is preserved, ensuring the integrity of the Josephson junction.

Additionally, Yau has patented a "Vertical bipolar junction transistor and vertical field effect transistor with shared floating region." This invention integrates a vertical bipolar junction transistor and a vertical field effect transistor on the same semiconductor material substrate or layer. The vBJT collector is connected to the adjacent vFET source, allowing for negative feedback and low transit times, thereby enhancing performance and efficiency.

Career Highlights:

Throughout his career, Jeng-Bang Yau has worked with renowned industry leaders, including the prestigious International Business Machines Corporation (IBM) and GlobalFoundries Inc. His association with these prominent companies signifies his expertise and dedication to advancing semiconductor technology. Yau's multidimensional contributions have played a pivotal role in shaping the industry's landscape and establishing him as a respected figure within the field.

Collaborations:

In his pursuit of innovation, Jeng-Bang Yau has collaborated with esteemed colleagues, including Tak H. Ning and Alexander Reznicek. Collaboration fosters new ideas, encourages knowledge sharing, and amplifies the impact of individual contributions. Working alongside accomplished professionals like Ning and Reznicek undoubtedly enriched Yau's work and resulted in the development of cutting-edge technologies.

Conclusion:

Jeng-Bang Yau's transformative work in semiconductor technology has paved the way for advancements in device fabrication and performance. With a remarkable portfolio of over 126 patents, his intellectual contributions have greatly influenced the field. Collaborating with industry leaders and leveraging his expertise, Yau has consistently delivered groundbreaking inventions, leaving an indelible mark on the semiconductor industry. His dedication and commitment to innovation continue to inspire aspiring inventors and shape the future of this ever-evolving field.

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