The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2021

Filed:

Sep. 16, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alexander Reznicek, Troy, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Jeng-Bang Yau, Yorktown Heights, NY (US);

Karthik Balakrishnan, Scarsdale, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/119 (2006.01); H05G 1/28 (2006.01); G01T 1/02 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); G01T 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 31/119 (2013.01); G01T 1/026 (2013.01); H01L 21/02164 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0657 (2013.01); H01L 29/785 (2013.01); H05G 1/28 (2013.01); G01T 7/00 (2013.01); H01L 29/0649 (2013.01); H01L 2924/13067 (2013.01);
Abstract

A semiconductor radiation monitor (i.e., dosimeter) is provided that has an oxide charge storage region located on a first side of a semiconductor fin and a functional gate structure located on a second side of the semiconductor fin that is opposite the first side. Charges are created in the oxide charge storage region that is located on the first side of the semiconductor fin and detected on the second side of the semiconductor fin by the functional gate structure. Multiple semiconductor fins in parallel can form a dense and very sensitive semiconductor radiation monitor.


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