The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Oct. 21, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alexander Reznicek, Troy, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Jeng-Bang Yau, Yorktown Heights, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/8249 (2006.01); H01L 27/082 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0623 (2013.01); H01L 21/8249 (2013.01); H01L 27/0617 (2013.01); H01L 27/0826 (2013.01); H01L 29/66666 (2013.01); H01L 29/732 (2013.01); H01L 29/7827 (2013.01);
Abstract

A semiconductor device or circuit includes a vertical bipolar junction transistor (vBJT) and a vertical filed effect transistor (vFET). The vBJT collector is electrically and/or physically connected to an adjacent vFET source. For example, a vBJT collector and a vFET source may be integrated upon a same semiconductor material substrate or layer. The vFET provides negative feedback for the collector-base voltage and the vBJT emitter and collector allow for low transit times.


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