The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Oct. 18, 2006
Applicants:
Meikei Ieong, Wappingers Falls, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Ghavam Shahidi, Pound Ridge, NY (US);
Inventors:
Meikei Ieong, Wappingers Falls, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Ghavam Shahidi, Pound Ridge, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/036 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a hybrid SOI substrate comprising an upper Si-containing layer and a lower Si-containing layer, wherein the upper Si-containing layer and the lower Si-containing layer have different crystallographic orientations. In accordance with the present invention, the buried insulating region may be located within one of the Si-containing layers or through an interface located between the two Si-containing layers.