The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Jun. 23, 2006
Huilong Zhu, Poughkeepsie, NY (US);
Bruce B. Doris, Brewster, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Philip J. Oldiges, Lagrangeville, NY (US);
Min Yang, Yorktown Heights, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Bruce B. Doris, Brewster, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Philip J. Oldiges, Lagrangeville, NY (US);
Min Yang, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a method of forming a substantially planar SOI substrate having multiple crystallographic orientations including the steps of providing a multiple orientation surface atop a single orientation layer, the multiple orientation surface comprising a first device region contacting and having a same crystal orientation as the single orientation layer, and a second device region separated from the first device region and the single orientation layer by an insulating material, wherein the first device region and the second device region have different crystal orientations; producing a damaged interface in the single orientation layer; bonding a wafer to the multiple orientation surface; separating the single orientation layer at the damaged interface; wherein a damaged surface of said single orientation layer remains; and planarizing the damaged surface until a surface of the first device region is substantially coplanar to a surface of the second device region.