The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2010
Filed:
Jun. 23, 2008
Kevin K. Chan, Staten Island, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Alexander Reznicek, Mount Kisco, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Leathen Shi, Yorktown Heights, NY (US);
Min Yang, Mahopac, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Alexander Reznicek, Mount Kisco, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Leathen Shi, Yorktown Heights, NY (US);
Min Yang, Mahopac, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of forming a strained Si-containing hybrid substrate are provided as well as the strained Si-containing hybrid substrate formed by the methods. In the methods of the present invention, a strained Si layer is formed overlying a regrown semiconductor material, a second semiconducting layer, or both. In accordance with the present invention, the strained Si layer has the same crystallographic orientation as either the regrown semiconductor layer or the second semiconducting layer. The methods provide a hybrid substrate in which at least one of the device layers includes strained Si.