Yorktown Heights, NY, United States of America

Leathen Shi

This inventor holds 53 USPTO granted patents and 5 published patent applications, plus 1 CIPO patent and 1 EPO patent, primarily in Semiconductor Technology (CPC class H01L). Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 1991-2020.

USPTO Granted Patents = 53 

% Patents Active = 45.3


 

Average Co-Inventor Count = 4.8

ph-index = 16

Forward Citations = 1,495(Granted Patents)

Forward Citations (Not Self Cited) = 1,463(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:


Years Active: 1991-2020

Loading Chart...
Loading Chart...
Loading Chart...
Areas of Expertise:
Semiconductor Devices
SOI Technology
Wafer Bonding
Strained Silicon
Epitaxial Lift-Off
Thermal Management
Isolation Structures
Nanowire Control
High-K Dielectric
Tensile-Strained SiGe
Adaptive Chuck
Defect-Free Substrates
53 patents (USPTO):Explore Patents

Title: Innovations by Leathen Shi: A Pioneer in Semiconductor Technology

Introduction

Leathen Shi, a prominent inventor based in Yorktown Heights, NY, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 53 patents, Shi’s work focuses on advancing the integration and manufacturing processes of semiconductor devices.

Latest Patents

Among his latest patents, Leathen Shi has developed innovative methods for wafer level integration, emphasizing design and co-design, structural processing, equipment stress management, and thermal management. One notable patent provides a method to create a multi-layer wafer by applying a stress compensating oxide layer on two heterogeneous wafers, followed by the application of bonding oxide layers. The process includes chemical-mechanical polishing and low-temperature bonding to forge a multi-layer wafer pair, which enhances device performance and reliability.

Additionally, Shi has patented a wafer-to-wafer semiconductor device that comprises a crack-arresting film structure. This invention features a first wafer substrate with a bonding layer and a second wafer substrate with its bonding layer. The inclusion of a crack-arresting film layer on at least one substrate boosts the bonding energy at the interface, which is crucial for the durability of semiconductor devices.

Career Highlights

Leathen Shi’s impressive career includes notable stints at leading technology companies, notably IBM and Globalfoundries Inc. His work in these organizations has been instrumental in driving forward innovative solutions in semiconductor manufacturing and design.

Collaborations

Throughout his career, Leathen Shi has collaborated with esteemed colleagues like Kevin K Chan and Jack Oon Chu, contributing to groundbreaking advancements in the semiconductor industry. These collaborations highlight the collective effort in achieving significant technological progress.

Conclusion

Leathen Shi embodies the spirit of innovation in the semiconductor sector, with his numerous patents paving the way for future advancements. His commitment to improving manufacturing processes and device performance continues to inspire the next generation of inventors and engineers.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to [email protected]
Loading…