The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Apr. 05, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Wei Lin, Albany, NY (US);

Leathen Shi, Yorktown Heights, NY (US);

Spyridon Skordas, Troy, NY (US);

Kevin R. Winstel, East Greenbush, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 33/00 (2010.01); H01L 21/762 (2006.01); H01L 21/18 (2006.01);
U.S. Cl.
CPC ...
H01L 24/32 (2013.01); H01L 21/187 (2013.01); H01L 21/76251 (2013.01); H01L 21/76254 (2013.01); H01L 23/562 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/80 (2013.01); H01L 24/83 (2013.01); H01L 24/94 (2013.01); H01L 33/0079 (2013.01); H01L 24/03 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/04 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/27452 (2013.01); H01L 2224/27616 (2013.01); H01L 2224/29023 (2013.01); H01L 2224/29083 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80907 (2013.01); H01L 2224/80948 (2013.01); H01L 2224/81896 (2013.01); H01L 2224/83 (2013.01); H01L 2224/838 (2013.01); H01L 2224/83896 (2013.01); H01L 2224/83907 (2013.01); H01L 2224/83948 (2013.01); H01L 2224/94 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/06 (2013.01); H01L 2924/0715 (2013.01); H01L 2924/3512 (2013.01); H01L 2924/35121 (2013.01); Y02P 80/30 (2015.11);
Abstract

A wafer-to-wafer semiconductor device includes a first wafer substrate having a first bonding layer formed on a first bulk substrate layer. A second wafer substrate includes a second bonding layer formed on a second bulk substrate layer. The second bonding layer is bonded to the first bonding layer to define a bonding interface. At least one of the first wafer substrate and the second wafer substrate includes a crack-arresting film layer configured to increase a bonding energy of the bonding interface.


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