Staten Island, NY, United States of America

Kevin K Chan

This inventor holds 231 USPTO granted patents and 14 published patent applications, plus 4 CIPO patents and 2 EPO patents, primarily in Semiconductor Technology (CPC class H01L29-66795). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Combe Inc.. Active years: 1987-2026.

USPTO Granted Patents = 231 

% Patents Active = 45.9



Average Co-Inventor Count = 4.5

ph-index = 26

Forward Citations = 2,940(Granted Patents)

Forward Citations (Not Self Cited) = 2,806(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • State Island, NY (US) (2005)
  • Califon, NJ (US) (2006)
  • Yorktown Heights, NY (US) (2011 - 2013)
  • Hopewell Junction, NY (US) (2012 - 2014)
  • Saten Island, NY (US) (2016)
  • Staten Island, NY (US) (1987 - 2021)
  • Lebanon, NJ (US) (2009 - 2022)

Company Filing History:


Years Active: 1987-2026

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Areas of Expertise:
FinFET Junctions
Deep Trench Capacitors
III-V MOSFETs
Bipolar Transistors
Self-Forming Spacers
Nanocrystal Dot Structures
High-Density EEPROM
Plasma Doping
Lateral Bipolar Junction Transistors
Germanium Transistors
Epitaxial Growth
Selective Epitaxy
231 patents (USPTO):Explore Patents

Title: Kevin K Chan: Innovating for the Future with Nanocrystal Dot Structures and Deep Trench Capacitors

Introduction:

In the world of innovations and patents, Kevin K Chan stands out as a prolific inventor and visionary from Staten Island, New York. With an impressive track record of 226 patents, Chan has made significant contributions to the fields of nanoscience and semiconductor technology. This article explores his latest patents, career highlights, and noteworthy collaborations.

Latest Patents:

Kevin K Chan's recent patents demonstrate his expertise in pushing the boundaries of technology. One of his notable inventions is the "Multi-terminal Cross-Point Synaptic Device Using Nanocrystal Dot Structures." This invention presents a crossbar array with a cross-point synaptic device at each junction. These devices utilize nanocrystal dot structures and offer three terminals for efficient interaction and weight storage. The technology enables precise electric pulses to store or erase weights, making it a promising advancement for artificial intelligence and machine learning applications.

Another significant patent by Chan is the "Semiconductor Structures with Deep Trench Capacitor and Methods of Manufacture." This patent introduces an integrated FinFET and deep trench capacitor structure. The manufacturing process involves the formation of deep trench capacitors in a silicon on insulator (SOI) substrate, enabling efficient integration with SOI fins and gate structures. This innovation opens doors for enhanced performance and compactness in semiconductor devices.

Career Highlights:

Kevin K Chan has made significant contributions while working at renowned companies such as IBM (International Business Machines Corporation) and GlobalFoundries Inc. At IBM, Chan likely played a pivotal role in cutting-edge research and development initiatives across various technological domains. His tenure at GlobalFoundries, a leading semiconductor foundry company, allowed him to contribute to the advancement of semiconductor manufacturing processes.

Collaborations:

Throughout his career, Kevin K Chan has collaborated with esteemed professionals, further enriching his expertise and augmenting the impact of his patents. Notably, he has worked with Dae-Gyu Park, a distinguished figure in nanoscience and material engineering, and Tak H Ning, a renowned expert in semiconductor technology. These collaborations demonstrate Chan's commitment to fostering innovation through knowledge sharing and cross-disciplinary expertise.

Conclusion:

Kevin K Chan's impressive collection of patents and numerous contributions to the realms of nanoscience and semiconductor technology exemplify his dedication to innovation. His groundbreaking inventions, like the multi-terminal cross-point synaptic device and the integrated FinFET and deep trench capacitor structure, have the potential to revolutionize various industries. As an inventor and researcher, Chan continues to push the boundaries of what is possible and inspire future generations to make their mark in the world of inventions and patents.

Disclaimer: The information in this article is gathered from publicly available sources and may not be entirely comprehensive or up-to-date. The purpose of this article is to provide general information and does not constitute professional advice.

Profile summary based on public USPTO records.
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