International Business Machines Corporation

Globalfoundries Inc.

Other

Elpis Technologies Inc.

Combe Inc.

Advanced Micro Devices Corporation

Kevin K Chan

Tak H Ning

Dae-Gyu Park

Xinhui Wang

Effendi Leobandung

Paul Michael Solomon

Min Yang

Jeng-Bang Yau

Jack Oon Chu

Jin Cai

Guy M Cohen

Cyril Cabral, Jr

Christian Lavoie

Bahman Hekmatshoartabari

Leathen Shi

Alexander Reznicek

Pouya Hashemi

Qizhi Liu

Kern Rim

Babar Ali Khan

Theodorus E Standaert

Sivananda K Kanakasabapathy

Hon-Sum Philip Wong

Judson Robert Holt

David Louis Harame

Hussein Ibrahim Hanafi

Viorel C Ontalus

Phaedon Avouris

Fenton Read McFeely

Devendra K Sadana

Arne Watson Ballantine

Haizhou Yin

Wilfried Haensch

Marwan H Khater

Meikei Ieong

Deborah A Neumayer

John Albrecht Ott

Kathryn Turner Schonenberg

Ali Khakifirooz

Edward J Nowak

Takashi Ando

Cheng-Wei Cheng

Ramachandran Muralidhar

John Joseph Pekarik

James L Speidell

Bruce Bennett Doris

Alfred Grill

Ying Di Zhang

Katherine Lynn Saenger

Eduard Albert Cartier

Evgeni Petrovich Gousev

Yu Zhu

Yun-Yu Wang

Steven John Koester

John J Ellis-Monaghan

Vijay Narayanan

Isaac Lauer

Sang Hoo Dhong

Timothy Joseph Dalton

James William Adkisson

Alvin Jose Joseph

Christopher Vincent Jahnes

Jeffrey Bowman Johnson

Supratik Guha

Thomas N Adam

Ravikumar Ramachandran

Renee Tong Mo

Qiqing Christine Ouyang

Barry P Linder

Paul Charles Jamison

Wesley Charles Natzle

Robert L Bruce

Jack Allan Mandelman

Ghavam G Shahidi

Stephen W Bedell

Chung H Lam

Karthik Balakrishnan

Oleg Gluschenkov

Ramachandra Divakaruni

Dureseti Chidambarrao

Keith Kwong Hon Wong

Davood Shahrjerdi

Fei Liu

Douglas Duane Coolbaugh

Chung-Hsun Lin

Joel Pereira De Souza

Paul Stephen Andry

Kevin Shawn Petrarca

Martin Michael Frank

Brian Joseph Greene

Robert H Dennard

Bomy A Chen

Tze-Chiang Chen

Dario Leonardo Goldfarb

Rajarao Jammy

Kailash Gopalakrishnan

Jerome J Cuomo

Henry K Utomo

Matthew Warren Copel

Huajie Chen

A system for refilling a stick product, such as lipstick or deodorant, in a propel-repel dispenser allows the reuse of the propel-repel mechanism. The stick product refill is shaped and dimensioned to be inserted into the open end of the dispenser and to attach to the receptacle that holds the stick product after the used product has been removed. Attachment of the refill to the stick receptacle is by an attachment component on the outer surface of an anchor cap enclosing the distal end of the refill and/or on the receptacle itself. Once secured to the receptacle, the refill can be advanced and retracted by the propel-repel mechanism so that it protrudes when in use and is withdrawn with the dispenser to protect it when not in use.

Stick product refill system

Described herein is a crossbar array that includes a cross-point synaptic device at each of a plurality of crosspoints. The cross-point synaptic device includes a weight storage element comprising a set of nanocrystal dots. Further, the cross-point synaptic device includes at least three terminals for interacting with the weight storage element, wherein a weight is stored in the weight storage element by sending a first electric pulse via a gate terminal from the at least three terminals, the first electric pulse causes the nanocrystal dots to store a corresponding charge, and the weight is erased from the weight storage element by sending a second electric pulse via the gate terminal, the second electric pulse having an opposite polarity of the first electric pulse.

Multi-terminal cross-point synaptic device using nanocrystal dot structures

An integrated FinFET and deep trench capacitor structure and methods of manufacture are disclosed. The method includes forming at least one deep trench capacitor in a silicon on insulator (SOI) substrate. The method further includes simultaneously forming polysilicon fins from material of the at least one deep trench capacitor and SOI fins from the SOI substrate. The method further includes forming an insulator layer on the polysilicon fins. The method further includes forming gate structures over the SOI fins and the insulator layer on the polysilicon fins.

Semiconductor structures with deep trench capacitor and methods of manufacture

A method for forming an overlap transistor includes forming a gate structure over a III-V material, wet cleaning the III-V material on side regions adjacent to the gate structure and plasma cleaning the III-V material on the side regions adjacent to the gate structure. The III-V material is plasma doped on the side regions adjacent to the gate structure to form plasma doped extension regions that partially extend below the gate structure.

III-V extension by high temperature plasma doping

A method of forming a self-forming spacer using oxidation. The self-forming spacer may include forming a fin field effect transistor on a substrate, the fin field effect transistor includes a gate on a fin, the gate is perpendicular to the fin; forming a gate spacer on the gate and a fin spacer on the fin, the gate spacer and the fin spacer are formed in a single step by oxidizing an exposed surface of the gate and an exposed surface of the fin; and removing the fin spacer from the fin.

Self-forming spacers using oxidation

A lateral bipolar junction transistor (LBJT) device that may include a dielectric stack including a pedestal of a base region passivating dielectric and a nucleation dielectric layer; and a base region composed of a germanium containing material or a type III-V semiconductor material in contact with the pedestal of the base region passivating dielectric. An emitter region and collector region may be present on opposing sides of the base region contacting a sidewall of the pedestal of the base region passivating dielectric and an upper surface of the nucleation dielectric layer.

Lateral bipolar junction transistor with abrupt junction and compound buried oxide

A finFET structure, and method of forming such structure, in which a germanium enriched nanowire is located in the channel region of the FET, while simultaneously having silicon-germanium fin in the source/drain region of the finFET.

Formation of FinFET junction

Semiconductor structures including an integrated FinFET with deep trench capacitor and methods of manufacture

After forming source/drain contact openings to expose portions of source/drain regions composed of an n-doped III-V compound semiconductor material, surfaces of the exposed portions of the source/drain regions are cleaned to remove native oxides and doped with plasma-generated n-type dopant radicals. Semiconductor caps are formed in-situ on the cleaned surfaces of the source/drain regions, and subsequently converted into metal semiconductor alloy regions. Source/drain contacts are then formed on the metal semiconductor alloy regions and within the source/drain contact openings.

Self-aligned trench metal-alloying for III-V nFETs

A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.

Plasma shallow doping and wet removal of depth control cap

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Staten Island, NY, United States of America

Kevin K Chan