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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10396154 B1

PDFFull Text
Date of Patent:
Aug. 27, 2019

Filed:

May. 09, 2017

Lateral bipolar junction transistor with abrupt junction and compound buried oxide

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kevin K. Chan, Staten Island, NY (US);

Pouya Hashemi, White Plains, NY (US);

Tak H. Ning, Yorktown Heights, NY (US);

Alexander Reznicek, Troy, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

L. Jeffrey Kelly

Primary Examiner:

Bitew A Dinke

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/735 (2006.01); H01L 23/31 (2006.01); H01L 29/161 (2006.01); H01L 29/20 (2006.01); H01L 29/10 (2006.01); H01L 29/737 (2006.01); H01L 29/165 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 23/29 (2006.01); H01L 29/66 (2006.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/265 (2006.01); H01L 21/74 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0808 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 21/3081 (2013.01); H01L 21/6835 (2013.01); H01L 23/291 (2013.01); H01L 23/298 (2013.01); H01L 23/3171 (2013.01); H01L 29/04 (2013.01); H01L 29/0623 (2013.01); H01L 29/0649 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/20 (2013.01); H01L 29/6625 (2013.01); H01L 29/66242 (2013.01); H01L 29/735 (2013.01); H01L 29/737 (2013.01); H01L 21/02172 (2013.01); H01L 21/02381 (2013.01); H01L 21/74 (2013.01); H01L 2221/6835 (2013.01);
Abstract

A lateral bipolar junction transistor (LBJT) device that may include a dielectric stack including a pedestal of a base region passivating dielectric and a nucleation dielectric layer; and a base region composed of a germanium containing material or a type III-V semiconductor material in contact with the pedestal of the base region passivating dielectric. An emitter region and collector region may be present on opposing sides of the base region contacting a sidewall of the pedestal of the base region passivating dielectric and an upper surface of the nucleation dielectric layer.

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