The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Jan. 30, 2017
International Business Machines Corporation, Armonk, NY (US);
Tokyo Electron Limited, Hopewell Junction, NY (US);
Robert L. Bruce, White Plains, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Sebastian U. Engelmann, White Plains, NY (US);
Dario L. Goldfarb, Dobbs Ferry, NY (US);
Marinus Hopstaken, Carmel, NY (US);
Mahmoud Khojasteh, Poughkeepsie, NY (US);
George G. Totir, Newtown, CT (US);
Hongwen Yan, Somers, NY (US);
Masahiro Yamazaki, Elmsford, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.