Somers, NY, United States of America

Hongwen Yan

USPTO Granted Patents = 39 

 

Average Co-Inventor Count = 5.0

ph-index = 7

Forward Citations = 153(Granted Patents)


Location History:

  • Yorktown Heights, NY (US) (2023)
  • Somers, NY (US) (2001 - 2024)

Company Filing History:


Years Active: 2001-2024

where 'Filed Patents' based on already Granted Patents

39 patents (USPTO):

Title: Innovations by Hongwen Yan: Pioneering Advancements in Qubit Device Technologies

Introduction

Hongwen Yan, located in Somers, NY, is a prolific inventor with a remarkable record of 39 patents to his name. His work primarily focuses on technologies surrounding qubit devices, superconducting junctions, and innovative materials that enhance device performance and reliability.

Latest Patents

Among Hongwen Yan's latest contributions are two notable patents. The first, titled "Sacrificial material facilitating protection of a substrate in a qubit device," outlines devices, systems, and methods for protecting substrates in qubit devices utilizing sacrificial materials. In one embodiment, this device features a superconducting lead supported by a pillar made of sacrificial material, which enhances the operational integrity of the underlying substrate.

The second patent, "Smooth metal layers in Josephson junction devices," describes techniques for forming smooth metal layers on selected surfaces of Josephson junction devices. This process involves depositing metal atom species to create a base layer, applying additional materials, and then utilizing plasma etching to achieve a smoother etched surface, ultimately improving device performance.

Career Highlights

Hongwen Yan has built his career by working at esteemed organizations, notably IBM (International Business Machines Corporation) and Freescale Semiconductor, Inc. His experience at these companies has provided him with a solid foundation in the field of semiconductor technology and advanced materials.

Collaborations

Throughout his career, Hongwen has collaborated with notable colleagues, including Richard Stephan Wise and Ying Di Zhang. These partnerships have not only enriched his work but have also contributed to the advancement of technologies within their respective fields.

Conclusion

In summary, Hongwen Yan's innovative spirit and extensive patent portfolio underline his significance as a key player in the development of advanced qubit devices and Josephson junction technologies. His contributions continue to pave the way for future advancements in the semiconductor industry, making him an essential figure in the realm of scientific innovation.

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