The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2019
Filed:
Oct. 04, 2016
International Business Machines Corporation, Armonk, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Sebastian U. Engelmann, White Plains, NY (US);
Marinus Johannes Petrus Hopstaken, Carmel, NY (US);
Christopher Scerbo, Bronx, NY (US);
Hongwen Yan, Somers, NY (US);
Yu Zhu, West Harrison, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
After forming source/drain contact openings to expose portions of source/drain regions composed of an n-doped III-V compound semiconductor material, surfaces of the exposed portions of the source/drain regions are cleaned to remove native oxides and doped with plasma-generated n-type dopant radicals. Semiconductor caps are formed in-situ on the cleaned surfaces of the source/drain regions, and subsequently converted into metal semiconductor alloy regions. Source/drain contacts are then formed on the metal semiconductor alloy regions and within the source/drain contact openings.