White Plains, NY, United States of America

Sebastian Ulrich Engelmann

USPTO Granted Patents = 44 (Patent Applications = 7)

Average Co-Inventor Count = 4.7

ph-index = 7

Forward Citations = 116(Granted Patents)

Location History:

New York, NY (US) (2014 - 2019)
White Plains, NY (US) (2010 - 2022)
Yorktown Heights, NY (US) (2012 - 2024)

Company Filing History:

37 out of 164,108

International Business Machines Corporation

Tokyo Electron Limited

patents

5. 1 out of 51

Elpis Technologies Inc.

patents

6. 1 out of 59

Globalfoundries U.S. 2 LLC

patents

where one patent can have more than one assignee

Years Active: 2010-2025

where 'Filed Patents' based on already Granted Patents

44 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12329044 - Applying inert ion beam etching for improving a profile and repairing sidewall damage for phase change memory devices (2025-06-10),

2. 12057322 - Methods for etching metal films using plasma processing (2024-08-06),

3. 11270893 - Layer-by-layer etching of poly-granular metal-based materials for semiconductor structures (2022-03-08),

4. 11018225 - III-V extension by high temperature plasma doping (2021-05-25),

5. 10714341 - Reactive ion etching assisted lift-off processes for fabricating thick metallization patterns with tight pitch (2020-07-14),

6. 10651286 - High selectivity nitride removal process based on selective polymer deposition (2020-05-12),

7. 10529633 - Method of integrated circuit (IC) chip fabrication (2020-01-07),

8. 10366918 - Self-aligned trench metal-alloying for III-V nFETs (2019-07-30),

9. 10325998 - High selectivity nitride removal process based on selective polymer deposition (2019-06-18),

10. 10305029 - Image reversal process for tight pitch pillar arrays (2019-05-28),

11. 10304692 - Method of forming field effect transistor (FET) circuits, and forming integrated circuit (IC) chips with the FET circuits (2019-05-28),

12. 10276439 - Rapid oxide etch for manufacturing through dielectric via structures (2019-04-30),

13. 10276384 - Plasma shallow doping and wet removal of depth control cap (2019-04-30),

14. 10269924 - High selectivity nitride removal process based on selective polymer deposition (2019-04-23),

15. 10167443 - [object Object] (2019-01-01),

Sure, here is the article about inventor Sebastian Ulrich Engelmann:

Title: The Innovative Work of Sebastian Ulrich Engelmann

Introduction: Sebastian Ulrich Engelmann, a prolific inventor based in White Plains, NY (US), has made significant contributions to the field of semiconductor structures with a remarkable portfolio of 42 patents.

Latest Patents: Among his latest patents is the groundbreaking invention titled "Layer-by-layer etching of poly-granular metal-based materials for semiconductor structures". This method revolutionizes the etching process of poly-granular metal-based films in semiconductor structures, ensuring a uniform surface modification region with precise depth control.

Sebastian Ulrich Engelmann also patented "III-V extension by high temperature plasma doping", a method that enhances the performance of overlap transistors by forming plasma-doped extension regions below the gate structure in III-V materials.

Career Highlights: Sebastian Ulrich Engelmann has honed his expertise while working at prestigious companies such as IBM (International Business Machines Corporation) and Zeon Corporation. His tenure at these organizations has been marked by continuous innovation and technological advancement in the semiconductor industry.

Collaborations: Throughout his career, Sebastian Ulrich Engelmann has collaborated with skilled professionals to bring his inventions to fruition. Notable coworkers include Masahiro Nakamura and Nicholas C M Fuller, who have contributed significantly to the success of his patented technologies.

Conclusion: Sebastian Ulrich Engelmann's inventive spirit and dedication to advancing semiconductor technologies have solidified his position as a leader in the field. His patents and collaborations stand as a testament to his commitment to innovation and excellence in the realm of semiconductor structures.

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7 patents pending:

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