The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2019

Filed:

Nov. 10, 2017
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Zeon Corporation, Tokyo, JP;

Inventors:

Nathan P. Marchack, New York, NY (US);

Sebastian U. Engelmann, White Plains, NY (US);

Masahiro Nakamura, Eastchester, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 21/311 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01);
Abstract

Fabrication of a semiconductor device includes providing a semiconductor substrate, and a dielectric layer disposed over the semiconductor substrate. The dielectric layer includes a plurality of vias extending through the dielectric layer to the top surface of the semiconductor substrate. Each of the vias contains an organic planarization material. The dielectric layer is removed by plasma etching with a gas having a general chemical formula of CHFwherein x is greater than 3 and y is greater than z to provide an array of pillars including the organic planarization material on the semiconductor substrate.


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