The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Nov. 24, 2021
International Business Machines Corporation, Armonk, NY (US);
Luxherta Buzi, Yorktown Heights, NY (US);
Thitima Suwannasiri, Oak Ridge, NJ (US);
Lynne Marie Gignac, Beacon, NY (US);
Robert L. Bruce, White Plains, NY (US);
Sebastian Ulrich Engelmann, White Plains, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A process of improving a profile and repairing sidewall damage for phase change memory devices. The process includes applying inert ion beam etching to trim a sidewall of a layer of phase change memory material in a phase change memory device, where the sidewall has been damaged in reactive ion etching using halogens. In the process, the inert ion beam etching is with low energy. In the process, applying the inert ion beam etching to trim the sidewall is at a predetermined low temperature. In the process, applying the inert ion beam etching to trim the sidewall is at a predetermined small angle between an inert ion beam and a surface tangent of the sidewall.