Luxherta Buzi

Title: Innovations of Luxherta Buzi in Phase Change Memory Devices

Introduction

Luxherta Buzi is an accomplished inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of phase change memory devices, showcasing his expertise through innovative patent applications. His work focuses on improving the performance and reliability of memory technologies.

Latest Patents

Luxherta Buzi holds a patent for a process titled "Applying inert ion beam etching for improving a profile and repairing sidewall damage for phase change memory devices." This patent describes a method that enhances the profile and repairs sidewall damage in phase change memory devices. The process involves using inert ion beam etching to trim the sidewall of a layer of phase change memory material, particularly when the sidewall has been compromised during reactive ion etching with halogens. Notably, this method employs low-energy inert ion beam etching at a predetermined low temperature and a specific small angle between the ion beam and the surface tangent of the sidewall.

Career Highlights

Luxherta Buzi is associated with the International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to contribute to cutting-edge research and development in memory technologies, further establishing his reputation as a leading inventor in the field.

Collaborations

Throughout his career, Luxherta has collaborated with notable colleagues, including Thitima Suwannasiri and Lynne Marie Gignac. These collaborations have fostered a productive environment for innovation and have led to advancements in their respective areas of expertise.

Conclusion

Luxherta Buzi's contributions to the field of phase change memory devices exemplify the impact of innovative thinking in technology. His patent and work at IBM highlight the importance of continuous improvement in memory technologies.