The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2024

Filed:

Oct. 21, 2019
Applicants:

Tokyo Electron Limited, Tokyo, JP;

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nicholas Joy, Albany, NY (US);

Devi Koty, Hopewell Junction, NY (US);

Qingyun Yang, Hopewell Junction, NY (US);

Nathan P. Marchack, Armonk, NY (US);

Sebastian Ulrich Engelmann, Yorktown Heights, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01L 21/0223 (2013.01); H01L 21/02247 (2013.01); H01L 21/67207 (2013.01); H01L 21/76805 (2013.01);
Abstract

A method of plasma processing that includes maintaining a plasma processing chamber between 10° C. to 200° C., flowing oxygen and nitrogen into the plasma processing chamber, where a ratio of a flow rate of the nitrogen to a flow rate of oxygen is between about 1:5 and about 1:1, and etching a ruthenium/osmium layer by sustaining a plasma in the plasma processing chamber.


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