IDiyas

For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Qingyun Yang

USPTO Granted Patents = 15

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 592(Granted Patents)


Location History:

  • Poughkeepsie, NY (US) (2004 - 2020)
  • Albany, NY (US) (2022)
  • Hopewell Junction, NY (US) (2003 - 2024)

Company Filing History:

goldMedal13 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal4 out of 10,295 
 
Tokyo Electron Limited
 patents
where one patent can have more than one assignee

Years Active: 2003-2024

where 'Filed Patents' based on already Granted Patents

15 patents (USPTO):
1. 12057322 - Methods for etching metal films using plasma processing (2024-08-06),
2. 11844290 - Plasma co-doping to reduce the forming voltage in resistive random access memory (ReRAM) devices (2023-12-12),
3. 11258012 - Oxygen-free plasma etching for contact etching of resistive random access memory (2022-02-22),
4. 10651372 - Process for patterning a magnetic tunnel junction (2020-05-12),
5. 9105741 - Method of replacement source/drain for 3D CMOS transistors (2015-08-11),
6. 8481389 - Method of removing high-K dielectric layer on sidewalls of gate structure (2013-07-09),
7. 8445948 - Gate patterning of nano-channel devices (2013-05-21),
8. 7816275 - Gate patterning of nano-channel devices (2010-10-19),
9. 7435652 - Integration schemes for fabricating polysilicon gate MOSFET and high-K dielectric metal gate MOSFET (2008-10-14),
10. 6960510 - Method of making sub-lithographic features (2005-11-01),
11. 6864041 - Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching (2005-03-08),
12. 6828187 - Method for uniform reactive ion etching of dual pre-doped polysilicon regions (2004-12-07),
13. 6703269 - Method to form gate conductor structures of dual doped polysilicon (2004-03-09),
14. 6541320 - Method to controllably form notched polysilicon gate structures (2003-04-01),
15. 6509219 - Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch (2003-01-21),

Title: The Innovative Journey of Inventor Qingyun YANG

Introduction: Qingyun YANG, a talented inventor based in Hopewell Junction, NY (US), has made significant contributions to the field of innovations with his groundbreaking ideas and inventions.

Latest Patents: Qingyun YANG holds several patents in various technological domains, showcasing his versatility and creativity in inventing new solutions to complex problems.

Career Highlights: Throughout his career, Qingyun YANG has demonstrated a keen eye for identifying gaps in the market and developing innovative products to address them. His dedication to pushing the boundaries of technology has earned him recognition as a visionary inventor.

Collaborations: Qingyun YANG has collaborated with leading research institutions and universities to further his research and bring his inventions to life. His ability to work effectively in multidisciplinary teams has led to successful partnerships and groundbreaking innovations.

Conclusion: In conclusion, Qingyun YANG's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventions. His contributions continue to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…