The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Sep. 13, 2012
Kevin K. Chan, Staten Island, NY (US);
Jinghong LI, Poughquag, NY (US);
Dae-gyu Park, Poughquag, NY (US);
Xinhui Wang, Poughkeepsie, NY (US);
Yun-yu Wang, Poughquag, NY (US);
Qingyun Yang, Poughkeepsie, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Jinghong Li, Poughquag, NY (US);
Dae-Gyu Park, Poughquag, NY (US);
Xinhui Wang, Poughkeepsie, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
Qingyun Yang, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor structure may include forming at least one fin and forming, over a first portion of the at least one fin structure, a gate. Gate spacers may be formed on the sidewalls of the gate, whereby the forming of the spacers creates recessed regions adjacent the sidewalls of the at least one fin. A first epitaxial region is formed that covers both one of the recessed regions and a second portion of the at least one fin, such that the second portion extends outwardly from one of the gate spacers. A first epitaxial layer is formed within the one of the recessed regions by etching the first epitaxial region and the second portion of the at least one fin. A second epitaxial region is formed at a location adjacent one of the spacers and over the first epitaxial layer within one of the recessed regions.