IDiyas

For the Inventor, By the Inventor

Poughquag, NY, United States of America

Yun-Yu Wang

USPTO Granted Patents = 78 


Average Co-Inventor Count = 4.9

ph-index = 11

Forward Citations = 437(Granted Patents)

DiyaCoin DiyaCoin = 0.28 


Inventors with similar research interests:


Location History:

  • Hopewell Junction, NY (US) (2012 - 2013)
  • Hoepwell Junction, NY (US) (2013)
  • Poughquag, NY (US) (2000 - 2018)
  • Poughkeepsie, NY (US) (2020)

Company Filing History:

goldMedal69 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal6 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal3 out of 14,705 
 
Infineon Technologies Ag
 patents
4. 2 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
5. 1 out of 2,867 
 
Stmicroelectronics Gmbh
 patents
6. 1 out of 10 
 
Jeol Usa, Inc.
 patents
7. 1 out of 836 
 
Dongbu Electronics, Co. Ltd.
 patents
8. 4 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 2000-2020

where 'Filed Patents' based on already Granted Patents

78 patents (USPTO):
1. 10566446 - Mitigation of hot carrier damage in field-effect transistors (2020-02-18),
2. 9953927 - Liner replacements for interconnect openings (2018-04-24),
3. 9685553 - Generating tensile strain in bulk finFET channel (2017-06-20),
4. 9551674 - Method of producing an un-distorted dark field strain map at high spatial resolution through dark field electron holography (2017-01-24),
5. 9275907 - 3D transistor channel mobility enhancement (2016-03-01),
6. 9105741 - Method of replacement source/drain for 3D CMOS transistors (2015-08-11),
7. 9023697 - 3D transistor channel mobility enhancement (2015-05-05),
8. 8901674 - Scaling of metal gate with aluminum containing metal layer for threshold voltage shift (2014-12-02),
9. 8735243 - FET device with stabilized threshold modifying material (2014-05-27),
10. 8729702 - Copper seed layer for an interconnect structure having a doping concentration level gradient (2014-05-20),
11. 8536555 - Voltage sensitive resistor (VSR) read only memory (2013-09-17),
12. 8490029 - Method of fabricating a device using low temperature anneal processes, a device and design structure (2013-07-16),
13. 8466443 - Voltage sensitive resistor (VSR) read only memory (2013-06-18),
14. 8465657 - Post chemical mechanical polishing etch for improved time dependent dielectric breakdown reliability (2013-06-18),
15. 8368070 - Antifuse structure for in line circuit modification (2013-02-05),

Title: The Innovative Journey of Inventor Yun-Yu Wang

Introduction: Yun-Yu Wang, a talented inventor based in Poughquag, NY (US), has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Yun-Yu Wang holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: Throughout his career, Yun-Yu Wang has been recognized for his exceptional problem-solving skills and creativity, leading to the development of cutting-edge technologies that have revolutionized various industries.

Collaborations: Yun-Yu Wang has collaborated with leading research institutions, universities, and tech companies to further his inventions and bring them to market, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Inventor Yun-Yu Wang's passion for innovation and dedication to pushing the boundaries of technology have solidified his reputation as a visionary in the world of inventions. His continued pursuit of excellence is sure to inspire future generations of inventors and innovators.

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