Yun-Yu Wang

USPTO Granted Patents = 78 (Patent Applications = 3)

EPO Patents = 3

Average Co-Inventor Count = 4.9

ph-index = 11

Forward Citations = 437(Granted Patents)

Forward Citations (Not Self Cited) = 426(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hopewell Junction, NY (US) (2012 - 2013)
Hoepwell Junction, NY (US) (2013)
Poughquag, NY (US) (2000 - 2018)
Poughkeepsie, NY (US) (2020)

Company Filing History:

69 out of 164,197

International Business Machines Corporation

Infineon Technologies Ag

patents

4. 2 out of 12,883

Advanced Micro Devices Corporation

patents

5. 1 out of 2,870

Stmicroelectronics Gmbh

Dongbu Electronics, Co. Ltd.

patents

8. 4 out of 832,843

Other

patents

where one patent can have more than one assignee

Years Active: 2000-2020

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Areas of Expertise:

Field-Effect Transistors

3D CMOS Transistors

Dark Field Electron Holography

Voltage Sensitive Resistor

Electromigration Reliability

Antifuse Structure

Semiconductor Devices

Interconnect Structures

Tensile Strain

Copper Seed Layer

Stacking Fault Reduction

Dielectric Layers

78 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10566446 - Mitigation of hot carrier damage in field-effect transistors (2020-02-18),

2. 9953927 - Liner replacements for interconnect openings (2018-04-24),

3. 9685553 - Generating tensile strain in bulk finFET channel (2017-06-20),

4. 9551674 - Method of producing an un-distorted dark field strain map at high spatial resolution through dark field electron holography (2017-01-24),

5. 9275907 - 3D transistor channel mobility enhancement (2016-03-01),

6. 9105741 - Method of replacement source/drain for 3D CMOS transistors (2015-08-11),

7. 9023697 - 3D transistor channel mobility enhancement (2015-05-05),

8. 8901674 - Scaling of metal gate with aluminum containing metal layer for threshold voltage shift (2014-12-02),

9. 8735243 - FET device with stabilized threshold modifying material (2014-05-27),

10. 8729702 - Copper seed layer for an interconnect structure having a doping concentration level gradient (2014-05-20),

11. 8536555 - Voltage sensitive resistor (VSR) read only memory (2013-09-17),

12. 8490029 - Method of fabricating a device using low temperature anneal processes, a device and design structure (2013-07-16),

13. 8466443 - Voltage sensitive resistor (VSR) read only memory (2013-06-18),

14. 8465657 - Post chemical mechanical polishing etch for improved time dependent dielectric breakdown reliability (2013-06-18),

15. 8368070 - Antifuse structure for in line circuit modification (2013-02-05),

Title: The Innovative Journey of Inventor Yun-Yu Wang

Introduction: Yun-Yu Wang, a talented inventor based in Poughquag, NY (US), has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Yun-Yu Wang holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: Throughout his career, Yun-Yu Wang has been recognized for his exceptional problem-solving skills and creativity, leading to the development of cutting-edge technologies that have revolutionized various industries.

Collaborations: Yun-Yu Wang has collaborated with leading research institutions, universities, and tech companies to further his inventions and bring them to market, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Inventor Yun-Yu Wang's passion for innovation and dedication to pushing the boundaries of technology have solidified his reputation as a visionary in the world of inventions. His continued pursuit of excellence is sure to inspire future generations of inventors and innovators.

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3 patents pending:

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3 patents (EPO):

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