The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Nov. 20, 2012
Stmicroelectronics, Inc., Coppell, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Chengyu Niu, Fishkill, NY (US);
Andrew Simon, Fishkill, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
STMicroelectronics, Inc., Coppell, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A trench is opened in a dielectric layer. The trench is then lined with a barrier layer and a metal seed layer. The metal seed layer is non-uniformly doped and exhibits a vertical doping gradient varying as a function of trench depth. The lined trench is then filled with a metal fill material. A dielectric cap layer is then deposited over the metal filled trench. Dopant from the non-uniformly doped metal seed layer is then migrated to an interface between the metal filled trench and the dielectric cap layer to form a self-aligned metal cap.