The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2016
Filed:
Oct. 24, 2014
International Business Machines Corporation, Armonk, NY (US);
Globalfoundries, Inc., Grand Cayman, KY;
Kevin K. Chan, Staten Island, NY (US);
Dae-Gyu Park, Poughquag, NY (US);
Xinhui Wang, Poughkeepsie, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
Min Yang, Yorktown Heights, NY (US);
Qi Zhang, Hopewell Junction, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method of forming a semiconductor structure includes growing an epitaxial doped layer over an exposed portion of a plurality of fins. The epitaxial doped layer combines the exposed portion of the fins to form a merged source and drain region. An implantation process occurs in the fins through the epitaxial doped layer to change the crystal lattice of the fins to form amorphized fins. A nitride layer is deposited over the semiconductor structure. The nitride layer covers the merged source and drain regions. A thermal treatment is performed in the semiconductor structure to re-crystallize the amorphized fins to form re-crystallized fins. The re-crystallized fins, the epitaxial doped layer and the nitride layer form a strained source and drain region which induces stress to a channel region.