Poughkeepsie, NY, United States of America

Xinhui Wang

USPTO Granted Patents = 56 (Patent Applications = 4)

Average Co-Inventor Count = 4.6

ph-index = 10

Forward Citations = 855(Granted Patents)

DiyaCoin

= 0.81

Inventors with similar research interests:

Location History:

Hopewell Junction, NY (US) (2012 - 2014)
Yorktown Heights, NY (US) (2011 - 2015)
Portland, OR (US) (2015)
Poughkeepsie, NY (US) (2001 - 2021)

Company Filing History:

52 out of 164,108

International Business Machines Corporation

where one patent can have more than one assignee

Years Active: 2001-2021

where 'Filed Patents' based on already Granted Patents

56 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11145658 - Semiconductor structures with deep trench capacitor and methods of manufacture (2021-10-12),

2. 11107821 - Semiconductor structures with deep trench capacitor and methods of manufacture (2021-08-31),

3. 11056493 - Semiconductor structures with deep trench capacitor and methods of manufacture (2021-07-06),

4. 10707217 - Semiconductor structures with deep trench capacitor and methods of manufacture (2020-07-07),

5. 10535662 - Semiconductor structures including an integrated FinFET with deep trench capacitor and methods of manufacture (2020-01-14),

6. 10361207 - Semiconductor structures with deep trench capacitor and methods of manufacture (2019-07-23),

7. 10290637 - Wrap-around fin for contacting a capacitor strap of a DRAM (2019-05-14),

8. 10269806 - Semiconductor structures with deep trench capacitor and methods of manufacture (2019-04-23),

9. 10256150 - Fabricating Fin-based split-gate high-drain-voltage transistor by work function tuning (2019-04-09),

10. 10177154 - Structure and method to prevent EPI short between trenches in FinFET eDRAM (2019-01-08),

11. 10170368 - Fabricating fin-based split-gate high-drain-voltage transistor by work function tuning (2019-01-01),

12. 10050039 - Semiconductor structures with deep trench capacitor and methods of manufacture (2018-08-14),

13. 10042968 - Semiconductor structures with deep trench capacitor and methods of manufacture (2018-08-07),

14. 10037998 - Semiconductor structures with deep trench capacitor and methods of manufacture (2018-07-31),

15. 9818741 - Structure and method to prevent EPI short between trenches in FinFET eDRAM (2017-11-14),

Title: Innovations and Contributions of Xinhui Wang in Semiconductor Technology

Introduction

Xinhui Wang, based in Poughkeepsie, NY, is a prominent inventor in the field of semiconductor technology, holding an impressive total of 56 patents. His work primarily focuses on enhancing semiconductor structures, which have significant implications for the electronics industry.

Latest Patents

Among his latest innovations is a patent for semiconductor structures with deep trench capacitors, along with methods of manufacture. This invention details an integrated FinFET and deep trench capacitor structure. The manufacturing method involves forming at least one deep trench capacitor in a silicon-on-insulator (SOI) substrate. Additionally, it includes the simultaneous formation of polysilicon fins from the material of the deep trench capacitor and SOI fins from the SOI substrate. An insulator layer is then formed on the polysilicon fins, followed by the creation of gate structures over the SOI fins and the insulator layer on the polysilicon fins. This inventive approach promises to advance the functionality and efficiency of semiconductor devices.

Career Highlights

Xinhui Wang has made significant contributions during his tenure at major technology firms, including International Business Machines Corporation (IBM) and Globalfoundries Inc. His experience in these renowned companies has facilitated the development and application of cutting-edge semiconductor technologies, enhancing the overall quality and performance of electronic products.

Collaborations

Throughout his career, Xinhui has collaborated with esteemed colleagues such as Kevin K. Chan and Babar Ali Khan. These collaborations have contributed to fruitful innovations and the successful development of patents that address contemporary challenges in semiconductor engineering.

Conclusion

Xinhui Wang's extensive patent portfolio and innovative contributions place him at the forefront of semiconductor technology. His recent advancements not only reflect his expertise in the field but also showcase the potential for future developments that can innovate the electronic landscape. As he continues to push the boundaries of technology, Xinhui Wang remains an influential figure in the world of inventors and semiconductor research.

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