The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Aug. 30, 2017
International Business Machines Corporation, Armonk, NY (US);
Michael V. Aquilino, Wappingers Falls, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Gregory Costrini, Hopewell Junction, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Byeong Y. Kim, LaGrangeville, NY (US);
William L. Nicoll, Pleasant Valley, NY (US);
Ravikumar Ramachandran, Pleasantville, NY (US);
Reinaldo A. Vega, Wappingers Falls, NY (US);
Hanfei Wang, White Plains, NY (US);
Xinhui Wang, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
After forming a laterally contacting pair of a semiconductor fin and a conductive strap structure having a base portion vertically contacting a deep trench capacitor embedded in a substrate and a fin portion laterally contacting the semiconductor fin, conducting spikes that are formed on the sidewalls of the deep trench are removed or pushed deeper into the deep trench. Subsequently, a dielectric cap that inhibits epitaxial growth of a semiconductor material thereon is formed over at least a portion of the base portion of the conductive strap structure. The dielectric cap can be formed either over an entirety of the base portion having a stepped structure or on a distal portion of the base portion.