The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Mar. 09, 2013
International Business Machines Corporation, Armonk, NY (US);
Terence L. Kane, Wappinger Falls, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
Keith Kwong Hon Wong, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method to form a voltage sensitive resistor (VSR) read only memory (ROM) device on a semiconductor substrate having a semiconductor device including depositing by chemical vapor deposition (CVD) a titanium nitride layer having residual titanium-carbon bonding such that the VSR is resistive as formed and can become less resistive by at least an order of 10when a predetermined voltage and current are applied to the VSR; and applying a predetermined voltage and current so as to make the CVD titanium nitride less resistive by at least an order of 10.