The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Jun. 30, 2010
Terence L. Kane, Wappinger Falls, NY (US);
Yun-yu Wang, Poughquag, NY (US);
Keith Kwong Hon Wong, Wappinger Falls, NY (US);
Terence L. Kane, Wappinger Falls, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
Keith Kwong Hon Wong, Wappinger Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disclosed is a voltage sensitive resistor (VSR) write once (WO) read only memory (ROM) device which includes a semiconductor device and a VSR connected to the semiconductor device. The VSR WO ROM device is a write once read only device. The VSR includes a CVD titanium nitride layer having residual titanium-carbon bonding such that the VSR is resistive as formed and can become less resistive by an order of 10, more preferably 10and most preferably 10when a predetermined voltage and current are applied to the VSR. A plurality of the VSR WO ROM devices may be arranged to form a high density programmable logic circuit in a 3-D stack. Also disclosed are methods to form the VSR WO ROM device.