The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Aug. 06, 2007
Matthew W. Copel, Yorktown Heights, NY (US);
Bruce B. Doris, Brewster, NY (US);
Vijay Narayanan, New York, NY (US);
Yun-yu Wang, Poughquag, NY (US);
Matthew W. Copel, Yorktown Heights, NY (US);
Bruce B. Doris, Brewster, NY (US);
Vijay Narayanan, New York, NY (US);
Yun-Yu Wang, Poughquag, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for fabricating an FET device is disclosed. The FET device has a gate insulator with a high-k dielectric portion, and a threshold modifying material. The method introduces a stabilizing material into the gate insulator in order to hinder one or more metals from the threshold modifying material to penetrate across the high-k portion of the gate insulator. The introduction of the stabilizing material may involve disposing a stabilizing agent over a layer which contains an oxide of the one or more metals. A stabilizing material may also be incorporated into the high-k dielectric. Application of the method may lead to FET devices with unique gate insulator structures.