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For the Inventor, By the Inventor

Wappingers Falls, NY, United States of America

Omer H Dokumaci

This inventor holds 97 USPTO granted patents, primarily in MOSFET Technology (CPC class H01L2-1336). Top assignees: International Business Machines Corporation, Samsung Electronics Co., Ltd., Other. Active years: 2001-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Omer H Dokumaci. Retrieved from https://idiyas.com/inventor/omer-h-dokumaci

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 97

% Patents Active = 45.4

Average Co-Inventor Count = 3.2

ph-index = 18

Forward Citations = 1,781(Granted Patents)

Forward Citations (Not Self Cited) = 1,680(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Poughkeepsie, NY (US) (2001 - 2002)
  • Wappinger Falls, NY (US) (2003)
  • Wappingers Fall, NY (US) (2004)
  • New York, NY (US) (2007)
  • Hartsdale, NY (US) (2009 - 2011)
  • Wappingers Falls, NY (US) (2003 - 2015)
  • Istanbul, TR (2015)
  • Gainesville, FL (US) (2016)

Company Filing History:

goldMedal93 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal2 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
bronzeMedal2 out of 834,513 
Other
 patents

Years Active: 2001-2016

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Areas of Expertise:
MOSFET
Strained Silicon
CMOS
SiGe
Epitaxial
High Mobility Channel
Ultra Shallow Junction
Stressed Nitride Liners
FinFET
Transistor Structure
SOI FET
Heterojunction Bipolar
97 patents (USPTO):Explore Patents
1. 9401424 - High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture (2016-07-26),
2. 9040373 - Silicon device on SI:C-OI and SGOI and method of manufacture (2015-05-26),
3. 9023698 - High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture (2015-05-05),
4. 8901566 - High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture (2014-12-02),
5. 8633071 - Silicon device on Si: C-oi and Sgoi and method of manufacture (2014-01-21),
6. 8232153 - Silicon device on Si:C-OI and SGOI and method of manufacture (2012-07-31),
7. 8168489 - High performance stress-enhanced MOSFETS using Si:C and SiGe epitaxial source/drain and method of manufacture (2012-05-01),
8. 8119472 - Silicon device on Si:C SOI and SiGe and method of manufacture (2012-02-21),
9. 8067805 - Ultra shallow junction formation by epitaxial interface limited diffusion (2011-11-29),
10. 8013397 - Embedded stressed nitride liners for CMOS performance improvement (2011-09-06),
11. 7994612 - FinFETs single-sided implant formation (2011-08-09),
12. 7964865 - Strained silicon on relaxed sige film with uniform misfit dislocation density (2011-06-21),
13. 7960790 - Self-aligned planar double-gate transistor structure (2011-06-14),
14. 7952149 - Anti-halo compensation (2011-05-31),
15. 7859061 - Halo-first ultra-thin SOI FET for superior short channel control (2010-12-28),

Certainly! Here is an article about the inventor Omer H Dokumaci:

Title: Unveiling the Innovations of Omer H Dokumaci in Semiconductor Devices

Introduction:

Omer H Dokumaci is a prolific inventor hailing from Wappingers Falls, NY, with an impressive portfolio of 97 patents in the field of semiconductor devices. His groundbreaking work has revolutionized the industry, particularly in the development of high-performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain.

Latest Patents:

Among his latest patents are:

1. High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain: This patent introduces methods for forming a semiconductor device, including the incorporation of a stressing layer with unique doping techniques and the formation of a silicide layer to enhance performance.

2. Silicon device on SI:C-OI and SGOI: This patent reveals a novel semiconductor structure and manufacturing method involving the formation of shallow trench isolation and the integration of different materials to enhance the functionality of nFET and pFET regions.

Career Highlights:

Omer H Dokumaci has made significant contributions to the field of semiconductor technology through his work at International Business Machines Corporation (IBM) and other renowned institutions. His expertise in materials science and semiconductor devices has paved the way for numerous advancements in the industry.

Collaborations:

Throughout his career, Omer H Dokumaci has collaborated with esteemed professionals in the field, including Dureseti Chidambarrao and Bruce Bennett Doris. These collaborations have led to the development of innovative technologies and the successful implementation of cutting-edge solutions in semiconductor manufacturing.

Conclusion:

In conclusion, Omer H Dokumaci stands out as a visionary inventor whose dedication to advancing semiconductor devices has reshaped the technological landscape. His patented inventions reflect a deep understanding of materials engineering and a commitment to pushing the boundaries of innovation in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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