The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Apr. 21, 2008
Brent A. Anderson, Jericho, VT (US);
Andres Bryant, Burlington, VT (US);
Josephine B. Chang, Mahopac, NY (US);
Omer H. Dokumaci, Hartsdale, NY (US);
Edward J. Nowak, Essex Junction, VT (US);
Brent A. Anderson, Jericho, VT (US);
Andres Bryant, Burlington, VT (US);
Josephine B. Chang, Mahopac, NY (US);
Omer H. Dokumaci, Hartsdale, NY (US);
Edward J. Nowak, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method patterns pairs of semiconducting fins on an insulator layer and then patterns a linear gate conductor structure over and perpendicular to the fins. Next, the method patterns a mask on the insulator layer adjacent the fins such that sidewalls of the mask are parallel to the fins and are spaced from the fins a predetermined distance. The method performs an angled impurity implant into regions of the fins not protected by the gate conductor structure and the mask. This process forms impurity concentrations within the fins that are asymmetric and that mirror one another in adjacent pairs of fins.