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For the Inventor, By the Inventor

Burlington, VT, United States of America

Andres Bryant

USPTO Granted Patents = 184 

Average Co-Inventor Count = 3.6

ph-index = 26

Forward Citations = 2,243(Granted Patents)

DiyaCoin DiyaCoin = 1.76 


Inventors with similar research interests:


Location History:

  • Chittenden County, VT (US) (1996 - 1998)
  • Burlington Junction, VT (US) (2010)
  • Underhill, VT (US) (2006 - 2011)
  • Essex Junction, VT (US) (1991 - 2013)
  • South Burlington, VT (US) (2015)
  • Burlington, VT (US) (2006 - 2020)

Company Filing History:

goldMedal170 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal14 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 58 
 
Toshiba America Electronic Components, Inc.
 patents
4. 1 out of 7,524 
 
Renesas Electronics Corporation
 patents
where one patent can have more than one assignee

Years Active: 1991-2020

where 'Filed Patents' based on already Granted Patents

184 patents (USPTO):
1. 10714616 - FINFET having a gate structure in a trench feature in a bent fin (2020-07-14),
2. 10056408 - Structure and method to form a FinFET device (2018-08-21),
3. 9805990 - FDSOI voltage reference (2017-10-31),
4. 9768304 - Method of fabricating a FINFET having a gate structure disposed at least partially at a bend region of the semiconductor fin (2017-09-19),
5. 9673055 - Method for quadruple frequency FinFETs with single-fin removal (2017-06-06),
6. 9548379 - Asymmetric multi-gate FinFET (2017-01-17),
7. 9548306 - Method of forming a complementary metal oxide semiconductor structure with N-type and P-type field effect transistors having symmetric source/drain junctions and optional dual silicides (2017-01-17),
8. 9543435 - Asymmetric multi-gate finFET (2017-01-10),
9. 9525069 - Structure and method to form a FinFET device (2016-12-20),
10. 9478615 - Blanket short channel roll-up implant with non-angled long channel compensating implant through patterned opening (2016-10-25),
11. 9437595 - Barrier trench structure and methods of manufacture (2016-09-06),
12. 9390981 - Method of forming a complementary metal oxide semiconductor structure with N-type and P-type field effect transistors having symmetric source/drain junctions and optional dual silicides (2016-07-12),
13. 9368410 - Semiconductor devices having tensile and/or compressive stress and methods of manufacturing (2016-06-14),
14. 9349852 - Method, structure and design structure for customizing history effects of SOI circuits (2016-05-24),
15. 9312274 - Merged fin structures for finFET devices (2016-04-12),

Title: Innovator Spotlight: Andres Bryant - Revolutionizing Semiconductor Technology

Introduction:

In the world of semiconductor technology, one name stands out for his groundbreaking inventions and numerous patents. Meet Andres Bryant, a prolific innovator hailing from Burlington, VT in the United States. With an impressive tally of 184 patents to his name, Bryant has made significant contributions to the field of semiconductors. This article delves into his latest patents, highlights his illustrious career, and explores his notable collaborations.

Latest Patents:

Andres Bryant's latest patents demonstrate his commitment to pushing the boundaries of semiconductor technology. One of his remarkable inventions is the "FINFET having a gate structure in a trench feature in a bent fin." This patent describes a semiconductor device with a bend and a trench feature that induces stress in the semiconductor material's inversion channel region, improving the device's performance.

Another notable patent by Bryant is the "Structure and method to form a FinFET device." It provides a systematic method for fabricating FinFET devices, involving the formation of fin structures, implementing a high-k dielectric metal gate structure, and preventing the merging of multiple fin structures. These patents highlight Bryant's expertise and his relentless pursuit of innovative solutions.

Career Highlights:

Throughout his career, spanning several prestigious companies, Andres Bryant has left an indelible mark on the semiconductor industry. He has held positions at globally recognized organizations, including International Business Machines Corporation (IBM) and GlobalFoundries Inc. At IBM, known for its pioneering contributions to technology, Bryant had the opportunity to work alongside brilliant minds and contribute to cutting-edge research and development.

Collaborations:

Collaboration is often the catalyst for groundbreaking innovations, and Andres Bryant is no stranger to this mindset. He has collaborated with esteemed professionals, including Edward J. Nowak and Brent Anderson. These collaborations have resulted in fruitful partnerships, further advancing the field of semiconductor technology. By exchanging ideas and leveraging each other's expertise, Bryant and his collaborators have pushed the boundaries of what is possible.

Conclusion:

Andres Bryant's exceptional contributions to semiconductor technology have undoubtedly cemented his status as an industry leader. With a remarkable list of patents and a career spanning prestigious organizations, his impact is both significant and far-reaching. Bryant's innovative mindset, combined with his collaborations with talented individuals, has enabled him to revolutionize semiconductor technology. As we eagerly await his next invention, we can be certain that Bryant's contributions will continue to shape the future of the industry.

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