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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10714616 B1

PDFFull Text
Date of Patent:
Jul. 14, 2020

Filed:

Aug. 16, 2017

Finfet having a gate structure in a trench feature in a bent fin

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Brent A. Anderson, Jericho, VT (US);

Andres Bryant, Burlington, VT (US);

Edward J. Nowak, Essex Junction, VT (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:

Michael LeStrange

Andrew M. Calderon

Roberts Calderon Safran & Cole, P.C.

Primary Examiner:

Anh D Mai

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/3115 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/1203 (2013.01); H01L 29/1037 (2013.01); H01L 29/66795 (2013.01); H01L 29/7843 (2013.01); H01L 29/7846 (2013.01); H01L 29/7849 (2013.01); H01L 21/31155 (2013.01); H01L 21/76283 (2013.01); H01L 29/66621 (2013.01);
Abstract

A semiconductor device including semiconductor material having a bend and a trench feature formed at the bend, and a gate structure at least partially disposed in the trench feature. A method of fabricating a semiconductor structure including forming a semiconductor material with a trench feature over a layer, forming a gate structure at least partially in the trench feature, and bending the semiconductor material such that stress is induced in the semiconductor material in an inversion channel region of the gate structure.

Find Patent Forward Citations

Anderson, Brent. (2020). Finfet having a gate structure in a trench feature in a bent fin (U.S. Patent No. 10714616). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10714616

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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