The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Oct. 20, 2015
International Business Machines Corporation, Armonk, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Andres Bryant, Burlington, VT (US);
Huiming Bu, Millwood, NY (US);
Sivananda K. Kanakasabapathy, Niskayuna, NY (US);
Tenko Yamashita, Schenectady, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
An asymmetrical finFET device includes at least one semiconductor fin on an upper surface of a semiconductor substrate. The fin extends along a length of the semiconductor substrate to define a fin length. A plurality of gate structures wrap around the sidewalls and upper fin surface of the fin. The plurality of gate structures includes at least one desired gate structure surrounded by at least one sacrificial gate structure. A first source/drain region is formed adjacent a first sidewall of the at least one desired gate structure, and a second source/drain region is formed adjacent a second sidewall of the at least one desired gate structure opposite the first sidewall. The dimensions of the first and second source/drain regions are asymmetrical with respect to one another.